英语翻译Research efforts aimed to elucidate how the electrophysical characteristics of semiconductors are affected by gas adsorption were initiated in the 1940s.Significant advances achieved since then in semiconductor engineering also posed an i

英语翻译Research efforts aimed to elucidate how the electrophysical characteristics of semiconductors are affected by gas adsorption were initiated in the 1940s.Significant advances achieved since then in semiconductor engineering also posed an i
英语翻译
Research efforts aimed to elucidate how the electrophysical characteristics of semiconductors are affected by gas adsorption were initiated in the 1940s.Significant advances achieved since then in semiconductor engineering also posed an inverse problem,namely,that of detecting gas impurities from the change of the electrophysical characteristics of the semiconductor.However,by contrast to semiconductor instruments that were promptly integrated into all spheres of science and technology,for semiconductor sensors it took an incomparably long time to cover the distance from laboratory prototypes to mass-produced gas analyzers.The progress in this sphere owes much to research activities supervised by I.A.Myasnikov from Karpov Institute of Physical Chemistry (NIFKHI).Those studies were focused on the elementary physicochemical processes occurring on the semiconductor metal oxide surface and on physicochemical applications of semiconductor sensors as high-sensitivity gauges (for summary of findings for most of those studies,see [1]).To this end,sensors with unique designs,manufactured in laboratories as one-of-a-kind instruments,were employed.This was paralleled by development (for the most part,abroad) of applied research activities on designing semiconductor sensors for determination of gas impurities in air and development of an appropriate mass production commercial technology [2–7].Those efforts culminated in manufacture of some types of sensors on the commercial scale.The principal manufacturers of metal oxide semiconductor sensors are City Technology (UK) and Figaro Inc.(Japan).
但这个不通！我不要翻译软件翻译的那种！

英语翻译Research efforts aimed to elucidate how the electrophysical characteristics of semiconductors are affected by gas adsorption were initiated in the 1940s.Significant advances achieved since then in semiconductor engineering also posed an i
研究成果旨在阐明如何electrophysical半导体特性影响吸附是气体1940年代自那时起重大进展,实现在半导体技术也提出了一个反问题,即:检测杂质气体从electrophysical特征的变化的半导体器件.然而,相比之下,半导体仪器,立即被整合到各个领域的科技、半导体传感器,它将一段无以伦比的长时间的距离覆盖大量气体分析仪对实验室的原型.在这一领域的进步很大程度上要归功于研究活动的监督Myasnikov I.A.从Karpov物理化学研究所(NIFKHI).这些研究都集中在基本的物理化学过程发生在半导体金属氧化物表面上的应用,半导体传感器的物理化学测量仪(高灵敏度的大部分的研究发现,看到[1]).为了达到这一目的,传感器的制造和设计独特、在实验室仪器,雇佣了独一无二的.这是由发展与国外的绝大部分的设计应用研究半导体传感器测定杂质气体的空气和发展一个合适的大规模生产商用技术[m].北京:2-7].这些努力最终以制造各种类型的传感器对商业规模.校长制造商的金属氧化物半导体传感器是城市技术有限公司(英国)和费.(日本).

旨在阐明如何半导体的电物理特性是由气体吸附影响的研究工作是在半导体工程以来所取得的1940s.Significant进步然后开始也构成一个反问题，即检测气体杂质从电物理特性的变化在半导体。然而，相对于半导体文书，被及时纳入科学和技术各个领域的集成的半导体传感器，它采取了一个无比漫长的时间范围涵盖了从实验室原型距离大规模生产的气体分析仪。在这方面取得进展在很大程度上是由保险业监督监管活动的研究Mya...

全部展开

旨在阐明如何半导体的电物理特性是由气体吸附影响的研究工作是在半导体工程以来所取得的1940s.Significant进步然后开始也构成一个反问题，即检测气体杂质从电物理特性的变化在半导体。然而，相对于半导体文书，被及时纳入科学和技术各个领域的集成的半导体传感器，它采取了一个无比漫长的时间范围涵盖了从实验室原型距离大规模生产的气体分析仪。在这方面取得进展在很大程度上是由保险业监督监管活动的研究Myasnikov从卡尔波夫物理化学（NIFKHI）学院。这些研究的基础上发生的物理化学过程集中在半导体金属氧化物表面上的高灵敏度测量仪的调查结果摘要（半导体传感器理化申请，这些研究大部分，参见[1]）。为此，有独特设计的传感器，在实验室中制造，之一的一类文书，被聘用。这是平行的发展（在大多数情况下，国外对设计中的空气和适当的商业量产技术开发气体杂质测定半导体传感器应用研究活动）[2-7]。在某些类型的传感器制造的商业规模达到高潮，这些努力。金属氧化物半导体传感器的主要制造商正在城市技术（英国）和费加罗公司（日本）。 求你了~~~~

收起